Infineon IRFR8314TRPBF N-Channel MOSFET: Datasheet, Application Circuit, and Replacement Guide
The Infineon IRFR8314TRPBF is a widely used N-channel power MOSFET designed with the robust HEXFET® technology, offering a compelling balance of performance, efficiency, and cost-effectiveness. This surface-mount device is a common choice for a vast array of switching applications, from power supplies to motor control.
Datasheet Overview: Key Parameters
A thorough understanding of the datasheet is crucial for proper implementation. The IRFR8314TRPBF's defining characteristics include:
Drain-Source Voltage (Vds): 55V, making it suitable for low-voltage applications like 12V or 24V systems.
Continuous Drain Current (Id): 3.7A at a case temperature of 25°C. This rating decreases as the temperature rises, so thermal management is important.
On-Resistance (Rds(on)): A maximum of 0.027 Ohms (27mΩ) at Vgs=10V. This low resistance is key to minimizing conduction losses and improving overall efficiency, as it directly translates to lower power dissipation (I²R losses).
Gate Threshold Voltage (Vgs(th)): Typically between 2V and 4V, indicating the voltage required to start turning the device on. A gate drive voltage (Vgs) of 10V is recommended to ensure it is fully enhanced and Rds(on) is at its lowest.
Package: Housed in a D-Pak (TO-252-2) package, which provides a good balance between size and power-handling capability, featuring an exposed tab for efficient heat sinking.
Typical Application Circuit
A fundamental application for the IRFR8314TRPBF is in a low-side switch configuration. In this setup, the MOSFET is placed between the load and ground.
1. The load (e.g., a DC motor, solenoid, or lamp) is connected to the positive supply rail (Vdd).
2. The drain (D) of the MOSFET is connected to the other terminal of the load.
3. The source (S) is connected directly to ground.
4. A microcontroller or logic circuit provides the control signal to the gate (G) through a gate driver resistor (e.g., 10-100Ω). This resistor helps suppress ringing and oscillations by limiting peak gate current.

5. A pull-down resistor (e.g., 10kΩ) from the gate to ground is essential to ensure the MOSFET remains firmly off when no active drive signal is present, preventing accidental turn-on from electrical noise.
This circuit is a building block for DC-DC converters (Buck, Boost), motor driver H-Bridges, and Power Management Units (PMUs).
Replacement and Cross-Reference Guide
When the IRFR8314TRPBF is unavailable, finding a suitable replacement requires careful comparison of key specs. Potential alternatives include:
IRF7413TRPBF (Infineon): Offers a similar Vds (55V) and even lower Rds(on) (16mΩ).
STP55NF06L (STMicroelectronics): A classic 60V MOSFET with a slightly higher Rds(on) but often readily available.
AOD4184 (Alpha & Omega Semiconductors): A 55V, 3.7A part in a similar D-Pak package.
FQP30N06L (ON Semiconductor): A through-hole (TO-220) alternative for prototyping or different board designs.
When selecting a replacement, prioritize:
Voltage Rating (Vds): Must be equal to or higher than the original.
Current Rating (Id): Should meet or exceed the original's requirement.
On-Resistance (Rds(on)): A lower value is generally acceptable and beneficial for efficiency.
Gate Threshold Voltage (Vgs(th)): Must be compatible with your driving circuit's voltage levels.
Package and Pinout: The physical compatibility (D-Pak) and pin configuration (Gate, Drain, Source) are critical for a drop-in replacement.
ICGOODFIND Summary
The Infineon IRFR8314TRPBF is a versatile and efficient N-channel MOSFET, prized for its low on-resistance and robust performance in switching power applications. Its strengths lie in its ability to handle moderate current levels with minimal losses, making it a go-to component for designers of consumer electronics, automotive systems, and industrial controls. Always consult the full datasheet to ensure it meets all the specific requirements of your application, especially concerning thermal considerations.
Keywords: N-Channel MOSFET, HEXFET®, Low On-Resistance, Switching Application, D-Pak Package.
