Infineon BSC072N03LD G5: High-Performance 30V Logic Level Power MOSFET

The Infineon BSC072N03LD G5 is a state-of-the-art N-channel power MOSFET engineered to deliver exceptional performance in low-voltage, high-efficiency applications. Optimized for use with logic-level gate drives, this MOSFET is a cornerstone component for modern power management systems where minimizing power losses and maximizing thermal performance are critical.

A key feature of this device is its very low typical on-state resistance (RDS(on)) of just 2.2 mΩ at 10 V and 2.7 mΩ at a logic-level 4.5 V gate drive. This exceptionally low resistance is paramount for reducing conduction losses, which directly translates to higher system efficiency, less heat generation, and the potential for more compact designs by reducing the need for large heat sinks. The device is rated for a continuous drain current (ID) of up to 100 A at 25°C, showcasing its ability to handle significant power in a small form factor.

The 30V drain-source voltage (VDS) rating makes it an ideal choice for a wide array of applications, including:

DC-DC Conversion: Serving as the primary switch in high-current synchronous buck converters for computing motherboards, servers, and telecom infrastructure.

Motor Control: Driving brushed DC motors in power tools, robotics, and automotive systems.

Load Switching: Managing high-current power distribution and solid-state switching in industrial systems and battery management systems (BMS).

Housed in an Infineon’s proprietary SuperSO8 package (PG-TDSON-8), the BSC072N03LD G5 offers an excellent power-to-size ratio. This advanced packaging technology enhances thermal dissipation, allowing the component to operate reliably under strenuous conditions. Furthermore, its logic-level compatibility ensures it can be driven directly from 3.3 V or 5 V microcontroller outputs, simplifying circuit design and reducing component count.

ICGOOODFIND: The Infineon BSC072N03LD G5 stands out as a superior logic-level MOSFET, combining an ultra-low RDS(on), high current capability, and excellent thermal performance in a compact package. It is an optimal solution for designers aiming to push the boundaries of efficiency and power density in next-generation low-voltage power electronics.

Keywords: Logic-Level MOSFET, Ultra-Low RDS(on), High Current Capability, Power Efficiency, SuperSO8 Package.