Infineon IPB107N20N3 G3: High-Performance 200V OptiMOS 5 Power MOSFET

In the realm of power electronics, efficiency, power density, and reliability are paramount. The Infineon IPB107N20N3 G3, a 200V N-channel power MOSFET from the advanced OptiMOS™ 5 technology family, stands out as a premier solution engineered to meet these demanding requirements. This MOSFET is specifically designed for a wide range of high-performance applications, including industrial drives, solar inverters, power supplies, and motor control systems.

A key highlight of the IPB107N20N3 G3 is its exceptionally low figure-of-merit (R DS(on) Q G). With a maximum on-state resistance (R DS(on)) of just 1.7 mΩ at 10 V, it minimizes conduction losses significantly. This allows for higher efficiency operation, as less energy is wasted as heat. Furthermore, the device features superior switching performance due to its low gate charge (Q G) and output charge (Q oss). This translates to reduced switching losses, enabling higher switching frequencies. The ability to switch faster is crucial for designers aiming to shrink the size of magnetic components like inductors and transformers, thereby increasing the overall power density of the system.

The device is housed in an TOLL (TO-Leadless) package, which offers a compact footprint and a very low package profile. This package is not only space-efficient but also provides excellent thermal performance due to its exposed top and bottom surfaces, facilitating effective dual-side cooling. This robust thermal capability ensures the MOSFET can operate reliably under high-stress conditions, contributing to the long-term durability of the end product. The combination of low electrical losses and efficient thermal management makes this component a top choice for modern, compact, and high-efficiency power conversion designs.

ICGOODFIND: For engineers seeking a high-efficiency, high-power-density solution for 200V applications, the Infineon IPB107N20N3 G3 represents a state-of-the-art component. Its blend of ultra-low R DS(on), fast switching characteristics, and thermally efficient TOLL packaging makes it an outstanding choice to push the boundaries of performance in power conversion systems.

Keywords: OptiMOS™ 5, Low R DS(on), High Power Density, TOLL Package, Efficient Switching