HMC1161LP5E: A 10W Ka-Band Power Amplifier for Advanced SATCOM and 5G Millimeter-Wave Systems

Release date:2025-09-09 Number of clicks:54

**HMC1161LP5E: A 10W Ka-Band Power Amplifier for Advanced SATCOM and 5G Millimeter-Wave Systems**

The relentless drive for higher data throughput in modern communication systems is pushing operational frequencies into the millimeter-wave (mmWave) spectrum. **Ka-Band, spanning 26.5 to 40 GHz, has become a critical frontier** for both next-generation satellite communications (SATCOM) and the deployment of high-band 5G networks. These applications demand power amplifiers (PAs) that deliver exceptional output power, high linearity, and excellent efficiency within a compact form factor. The **HMC1161LP5E from Analog Devices Inc. stands out as a premier solution** engineered specifically to meet these rigorous challenges.

This GaAs-based, pseudomorphic high electron mobility transistor (pHEMT) monolithic microwave integrated circuit (MMIC) is a powerhouse in a small 5x5 mm leadless package. Its core capability is the delivery of **up to 10 watts of saturated output power (Psat)** across a broad frequency range of 27 to 31 GHz. This immense power is crucial for overcoming path loss and ensuring strong, reliable signal strength in both uplink transmitter chains for satellite terminals and in 5G mmWave base station radios.

Beyond raw power, the HMC1161LP5E is designed for superior signal integrity. It achieves a **small-signal gain of 24 dB**, significantly reducing the need for additional gain stages and simplifying overall system design. Furthermore, it maintains **outstanding power-added efficiency (PAE) of 30%** at its 10W output level. This high efficiency is paramount for managing thermal dissipation and minimizing power consumption, which is a key concern in power-sensitive and thermally-constrained applications like airborne SATCOM terminals and dense 5G infrastructure.

The amplifier is also characterized by its robust performance metrics. It operates from a single positive supply of +8V, simplifying power management architecture. It incorporates on-chip bias sequencing and temperature compensation circuits, enhancing its reliability and ease of use. The device's architecture supports a wide dynamic range and is well-suited for complex modulation schemes like 256-QAM and 1024-QAM, which are essential for achieving the gigabit-per-second data rates required by modern standards.

In practical terms, the HMC1161LP5E is a versatile component at the heart of advanced systems. In **SATCOM**, it is ideal for high-data-rate military and commercial satellite uplinks, airborne connectivity platforms, and very-small-aperture terminal (VSAT) systems. In the realm of **5G**, it provides the necessary transmit power for mmWave base stations and fixed wireless access (FWA) customer premises equipment (CPE), enabling the multi-gigabit-per-second speeds that define true 5G performance.

**ICGOOODFIND**: The HMC1161LP5E is a benchmark Ka-Band power amplifier that successfully bridges the demanding requirements of both aerospace and telecommunications sectors. Its combination of **high output power, excellent efficiency, and integration** into a miniature package makes it an indispensable component for designers building the next generation of high-speed wireless systems.

**Keywords**: Ka-Band Power Amplifier, SATCOM, 5G Millimeter-Wave, 10W Output Power, Power-Added Efficiency (PAE)

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